Manipulation of Charge Transport by Metallic V 13 O 16 Decorated on Bismuth Vanadate Photoelectrochemical Catalyst
نویسندگان
چکیده
منابع مشابه
Factors affecting bismuth vanadate photoelectrochemical performance
Beckman Institute and Division of Chemist Institute of Technology, Pasadena, Californ edu † Electronic supplementary informatio photoanode performances; experimental FTO-glass photoanodes; statistics of aspect-ratio-normalised diameter distrib FTO-glass photoanodes; effect of iodi solubility of metal salts in the spin-coat of electrodeposited BiVO4 without sulte spectrum; SEM images of FTO on ...
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n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks ...
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n-Type bismuth vanadate has been identified as one of the most promising photoanodes for use in a water-splitting photoelectrochemical cell. The major limitation of BiVO4 is its relatively wide bandgap (∼2.5 eV), which fundamentally limits its solar-to-hydrogen conversion efficiency. Here we show that annealing nanoporous bismuth vanadate electrodes at 350 °C under nitrogen flow can result in n...
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ژورنال
عنوان ژورنال: Advanced Materials
سال: 2019
ISSN: 0935-9648,1521-4095
DOI: 10.1002/adma.201807204